| 摘要 |
PURPOSE: A silicon single crystal growth apparatus and a melt gap control method of the same are provided to exactly control a melt gap by using a melt gap control rod. CONSTITUTION: A silicon single crystal growth apparatus is provided with a chamber(10), a quartz crucible(20) installed in the chamber, a graphite crucible(30) for supporting the quartz crucible, and a pedestal(40) for supporting and moving the graphite crucible. The silicon single crystal growth apparatus further includes a heater(50) installed in the chamber, a radiation insulator(60) installed at the inner wall of the chamber for conserving the heat generated from the heater, and a heat shield(70) for preventing the heat radiated to a silicon single crystal ingot(IG). Preferably, a melt gap control rod(80) is connected with the lower portion of the heat shield. Preferably, the melt gap control rod is made of quartz.
|
