| 摘要 |
PURPOSE: A magnetic random access memory is provided to improve a circuit structure of the memory to prevent wiring resistance and contact resistance from increasing. CONSTITUTION: A magnetic random access memory includes a magnetic resistor storing data, a current driving line(57) selectively providing a magnetic field to the magnetic resistor, and a magnetic circuit(64). The magnetic circuit sustains the magnetic field provided from the current driving line. The current driving line includes a first face facing the magnetic resistor, a second face apposite to the first face, and two sidewalls located between the first and second faces. The magnetic circuit includes a pair of sheet member substantially composed of ferro-magnetic material elongated along with the two sidewalls of the current driving wire in order to expose the first and second faces of the current driving line.
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