| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve connection reliability by preventing a gap from being formed between an insulating layer and a main conductor layer using a metal film made of Au. CONSTITUTION: A semiconductor device includes an electrode pad(2), a main conductor layer(6) connected electrically with the electrode pad, an insulating layer, a protrusion electrode, and a metal film. The insulating layer(8) is formed on the main conductor layer. The insulating layer has an opening portion(8a) for exposing the main conductor layer. The protrusion electrode(9) is electrically connected with the main conductor layer through the opening portion. The metal film(7) is formed between the main conductor layer and the protrusion electrode. At this time, the protrusion electrode and the metal film are made of Sn and Au, respectively.</p> |
