| 摘要 |
PURPOSE: A thin film transistor display plate and a manufacturing method thereof are provided to secure an aperture ratio of pixels and simplify a manufacturing process simultaneously. CONSTITUTION: Gate and common wires which are constructed by a lower film(201) and an upper film(202) are formed on an insulation substrate(110). Gate wires(125,123) and common wires(136,138) are covered with a gate insulation film(140) made of SiNx. At an upper portion of the gate insulation film, a semiconductor(152) made of hydrogenated amorphous silicon is formed. Ohmic contact layers(165) are formed on an upper portion of the semiconductor(152). A data wire is formed on the ohmic contact layers(165). A passivation film(180) made of an insulation material with a low dielectric constant is formed on an upper portion of the data wires(171,173,175,179) and the semiconductor(152), not covered with the data wires. Pixel wires(196,198) are formed on an upper portion of the passivation film(180). |
