发明名称 MEMS DEVICE USING SOI WAFER, MANUFACTURING AND GROUNDING METHOD THEREOF
摘要 PURPOSE: An MEMS(Micro Electro Mechanical System) device using an SOI(Silicon On Insulator) wafer, a manufacturing and grounding method thereof are provided to be capable of electrically connecting a ground hole with a handle wafer using a simple process without an additional process. CONSTITUTION: An MEMS device(40) using an SOI wafer is provided with the first silicon layer(41), an insulating layer(42) formed on the first silicon layer, the second silicon layer(43) formed on the insulating layer, and a protection layer(44) formed on the second silicon layer. The MEMS device using an SOI wafer further includes a ground hole(GH) prolonged from the upper portion of the protection layer and the predetermined portion of the first silicon layer. At this time, the ground hole is filled with conductive material(CM).
申请公布号 KR20040046554(A) 申请公布日期 2004.06.05
申请号 KR20020074503 申请日期 2002.11.27
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KIM, GI HUN;PARK, GYU YEON
分类号 G01P15/00;B81B7/00;G01P15/08;H01L21/00;H01L27/01;H01L27/12;H01L29/84;H01L31/0392;(IPC1-7):H01L27/12 主分类号 G01P15/00
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