SEMICONDUCTOR DEVICE PREVENTING BREAKDOWN OF INSULATING LAYER BETWEEN ELECTRODES

摘要

PURPOSE: A semiconductor device is provided to prevent breakdown of an insulating layer between electrodes by reducing a voltage between the electrodes. CONSTITUTION: A semiconductor device includes a semiconductor substrate(500), an insulating layer(101,102,103) formed on the semiconductor substrate, a first electrode(201) extended on the insulating layer and receiving a first electric potential applied thereto, a second electrode(202) formed to be isolated from surroundings, a third electrode(203) capacitively coupled with the second electrode, and a cross section. A second electric potential lower than the first electric potential is applied to the third electrode. The cross section is perpendicular to a direction of extension of the first electrode and the second electrode can be located on a side opposite to the first electrode on the cross section.