发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH SECOND CONDUCTIVE TYPE SEMICONDUCTOR REGION AND ELECTRONIC CARD USING THE SAME
摘要 PURPOSE: A semiconductor IC(Integrated Circuit) device and an electronic card using the same are provided to protect an IC from being broken in spite of a disconnection state of the IC to a ground point and a power supply by using the second conductive type semiconductor region. CONSTITUTION: A semiconductor IC device includes the first conductive type semiconductor region(Psub), the first insulating gate type FET(Field Effect Transistor)(N1), and the second conductive type semiconductor region. The FET is formed on the first conductive type semiconductor region and connected to an output terminal. The FET includes the second conductive type source/drain region(D). The second conductive type semiconductor region(DN) is formed adjacent to the source/drain region in the first conductive type semiconductor region and connected with a gate(G) of the FET.
申请公布号 KR20040047726(A) 申请公布日期 2004.06.05
申请号 KR20030085439 申请日期 2003.11.28
申请人 发明人
分类号 H01L25/00;G06K19/07;H01L23/00;H01L23/02;H01L23/62;H01L27/02;H01L27/04;H01L27/092;H01L27/105;H01L27/146;H01L29/76;H02H9/00;(IPC1-7):H01L25/00 主分类号 H01L25/00
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