发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of embodying a SAW filter using an Sl(Semi Insulating)-GaN layer of an HEMT(High Electron Mobility Transistor) for integrating the devices on a unit wafer. CONSTITUTION: An HEMT device is manufactured by depositing an SI GaN layer(12) and an AlxGa1-xN layer(13) on a semiconductor substrate(11). The first predetermined region of the AlxGa1-xN layer is etched. An FET(Field Effect Transistor) device is manufactured by forming FET electrodes(14a,14b) on the predetermined region of the AlxGa1-xN layer. The second predetermined region of the AlxGa1-xN layer is etched for exposing the SI GaN layer. Then, a SAW filter is manufactured by forming SAW filter electrodes(15) on the exposed SI-GaN layer.
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申请公布号 |
KR20040046479(A) |
申请公布日期 |
2004.06.05 |
申请号 |
KR20020074420 |
申请日期 |
2002.11.27 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
BAE, SEONG BEOM;LEE, GYU SEOK;LEE, JAE HUN;LEE, JEONG HUI |
分类号 |
H01L29/772;(IPC1-7):H01L29/772 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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