SEMICONDUCTOR DEVICE WITH REDUCED PERIPHERAL REGION AND MULTILAYER METAL LINE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method of manufacturing the same are provided to improve the aperture ratio of a pixel region by using a reduced peripheral region and a multilayer metal line. CONSTITUTION: A semiconductor device includes a pixel region(101) and a plurality of peripheral regions(102a,102b,102c). At this time, the width of the peripheral region is half as much as that of a conventional peripheral region. The peripheral region includes a plurality of gate electrodes of TFTs(Thin Film Transistors) and a metal line. The metal line for contacting the gate electrodes is formed on or under the gate electrodes. The metal line is made of more than two layers.