FLASH MEMORY CELL WITH LOW-RESISTANCE CONTROL GATE ELECTRODE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A flash memory cell with a low-resistance control gate electrode is provided to prevent a semiconductor substrate from being contaminated by metal atoms by making a metal control gate electrode fully surrounded by an inner gate spacer and a capping insulation layer pattern. CONSTITUTION: A tunnel oxide layer(53) is formed on a semiconductor substrate(51). A gate pattern in which a floating gate(55a), a gate interlayer dielectric, a non-metallic control gate electrode, a metal control gate electrode and a capping insulation layer pattern(65a) are sequentially stacked is formed on a predetermined region of the tunnel oxide layer. The sidewall of the gate pattern is covered with an outer gate spacer(75). The inner gate spacer(69) is interposed between the outer gate spacer and at least the metal control gate electrode.