MAGNETIC MEMORY USING VERTICAL TRANSISTOR AND ITS FABRICATION METHOD

摘要

PURPOSE: A magnetic memory using a vertical transistor and its fabrication method are provided, which is used easily in a large integration and has a small size of a unit cell. CONSTITUTION: A plurality of pillars(130) are arranged on a semiconductor substrate(100) in two dimension and are used as a channel of a vertical transistor. A plurality of magnetic tunneling junctions(200) are arranged on an upper part of each pillar. A plurality of word lines(185) surround the pillars, and are arranged along one direction. And a plurality of bit lines(210) connect the magnetic tunneling junctions as crossing the word lines, on the magnetic tunneling junction.