发明名称 METHOD FOR PRODUCING SILICON TETRAFLUORIDE
摘要 The invention relates to methods for producing silicon tetrafluoride. The inventive method consists in conditioning the initial salt Na2SiF6 during 1.5-3 hours at a temperature ranging from 300 to 350 DEG C and a pressure reduced to 5 mm of mercury. Afterwards, a reaction mass is treated with fluor (it is possible, mixed with an inert gas) during the time ranging from 0.5 to 1.5 hours supplying fluor at a ratio Na2SiF6: F2 ranging from 50 to 100. The supply of fluor being stopped, the pressure inside a reactor is decreased. The gas emission being stopped, Na2SiF 6 is exposed to thermal decomposition in conjunction with the removal of the silicon tetrafluoride. Said invention makes it possible to produce silicon tetrafluoride having a purity of up to 99.991 mass % and potassium fluoride having a purity of up to 99.0 mass %.
申请公布号 KR20040047858(A) 申请公布日期 2004.06.05
申请号 KR20047004388 申请日期 2002.05.20
申请人 发明人
分类号 C01B33/107 主分类号 C01B33/107
代理机构 代理人
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