| 摘要 |
PURPOSE: A method for manufacturing a non-volatile memory device is provided to prevent the etching damage for an electric charge storing layer and restrain an under-cut region from being generated at the lateral portion of a lower oxide pattern by using a spacer. CONSTITUTION: A lower oxide pattern(115), an electric charge storing pattern(125), and a sacrificial oxide pattern(135) are sequentially deposited on a semiconductor substrate(100). A spacer(160) is formed at the sidewalls of the lower oxide pattern, the electric charge storing pattern, and the sacrificial oxide pattern. The electric charge storing pattern and the semiconductor pattern are selectively exposed to the outside by removing the sacrificial oxide pattern and the spacer. An upper oxide layer is formed on the entire surface of the resultant structure.
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