| 摘要 |
PURPOSE: A via contact structure of a semiconductor device and a forming method thereof are provided to be capable of improving the reliability of the semiconductor device and obtaining low resistance characteristics. CONSTITUTION: A via contact structure of a semiconductor device is provided with a semiconductor substrate(51), a lower metal line(58) formed on the semiconductor substrate, an intermetal dielectric(59) formed on the entire surface of the resultant structure, and a via contact hole formed through the intermetal dielectric for exposing the lower metal line. The via contact structure further includes an etched-back wetting layer(63a) formed at the sidewalls of the via contact hole and the upper surface of the intermetal dielectric. At this time, the lower metal line is exposed or enclosed by the etched-back wetting layer. Preferably, the lower metal line is formed by sequentially depositing the first metal pattern and a capping pattern.
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