METHOD FOR FORMING FIELD EFFECT TRANSISTOR(FET) OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an FET(Field Effect Transistor) of a semiconductor device is provided to minimize the deterioration of transistor characteristics due to a short channel effect by forming a source/drain region in an epitaxial layer. CONSTITUTION: An isolation layer(102) is formed on the first conductive type semiconductor substrate(101) for defining an active region. A dummy gate pattern is formed on the active region. An epitaxial layer(104) is formed at both sides of the dummy gate pattern on the active region. The second conductive type impurity diffusion layer(106) is formed in the epitaxial layer. A dummy gate groove(110) is formed by removing the dummy gate pattern for partially exposing the active region and the sidewalls of the epitaxial layer. A gate isolating layer(116) and a gate electrode layer are sequentially formed in the dummy gate groove. The gate electrode layer is polished until the gate isolating layer on the epitaxial layer is exposed. A gate electrode(117b) is formed by selectively patterning the gate electrode layer.