| 发明名称 |
Method to fabricate dual metal CMOS devices |
| 摘要 |
The present invention relates generally to barrier layers in transistor gate stacks in integrated circuits, and to processes for forming such gate stacks.
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| 申请公布号 |
US2004106249(A1) |
申请公布日期 |
2004.06.03 |
| 申请号 |
US20030601037 |
申请日期 |
2003.06.19 |
| 申请人 |
HUOTARI HANNU |
发明人 |
HUOTARI HANNU |
| 分类号 |
H01L21/28;H01L21/8238;H01L29/51;(IPC1-7):H01L29/74 |
主分类号 |
H01L21/28 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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