| 摘要 |
A method for manufacturing a semiconductor structure having an interlevel dielectric comprising (i) patterning features in the interlevel dielectric, (ii) depositing a metal into the features, and (iii) melting and recrystallizing metal in the features using a laser. Semiconductor structures having an interlevel dielectric that are made by the method. The recrystallizing step comprises exposing the metal in the features to a laser annealing protocol. The protocol includes exposing the metal to a laser having a predetermined wavelength selected from the range of 150 nm to 900 nm. In some instances, the laser used in the laser annealing protocol has an output pulse energy of about 1.0 joules/cm2 to about 4.0 joules/cm<2>. In some instances, the semiconductor structure is on a substrate and the recrystallizing step comprises simultaneously exposing the entire semiconductor structure to the laser. In other instances, the semiconductor structure is on a substrate and the recrystallizing step comprises exposing a first portion of the substrate at a first time t1 and a second portion of the substrate at a second, subsequent, time t2.
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