发明名称 |
[UNDER-BALL-METALLURGY LAYER] |
摘要 |
An under-ball-metallurgy layer between a bonding pad on a chip and a solder bump made with tin-based material is provided. The under-ball-metallurgy layer at least includes an adhesion layer over the bonding pad, a nickel-vanadium layer over the adhesion layer, a wettable layer over the nickel-vanadium layer and a barrier layer over the wettable layer. The barrier layer prevents the penetration of nickel atoms from the nickel-vanadium layer and reacts with tin within the solder bump to form inter-metallic compound. This invention also provides an alternative under-ball-metallurgy layer that at least includes an adhesion layer over the bonding pad, a wettable over the adhesion layer and a nickel-vanadium layer over the wettable layer. The nickel within the nickel-vanadium layer may react with tin within the solder bump to form an inter-metallic compound. |
申请公布号 |
US2004104484(A1) |
申请公布日期 |
2004.06.03 |
申请号 |
US20030604795 |
申请日期 |
2003.08.18 |
申请人 |
CHEN WILLIAM TZE-YOU;TONG HO-MING;LEE CHUN-CHI;TAO SU;WU JENG-DA;CHANG CHIH-HUANG;CHENG PO-JEN |
发明人 |
CHEN WILLIAM TZE-YOU;TONG HO-MING;LEE CHUN-CHI;TAO SU;WU JENG-DA;CHANG CHIH-HUANG;CHENG PO-JEN |
分类号 |
H01L21/60;H01L23/485;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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