发明名称 [UNDER-BALL-METALLURGY LAYER]
摘要 An under-ball-metallurgy layer between a bonding pad on a chip and a solder bump made with tin-based material is provided. The under-ball-metallurgy layer at least includes an adhesion layer over the bonding pad, a nickel-vanadium layer over the adhesion layer, a wettable layer over the nickel-vanadium layer and a barrier layer over the wettable layer. The barrier layer prevents the penetration of nickel atoms from the nickel-vanadium layer and reacts with tin within the solder bump to form inter-metallic compound. This invention also provides an alternative under-ball-metallurgy layer that at least includes an adhesion layer over the bonding pad, a wettable over the adhesion layer and a nickel-vanadium layer over the wettable layer. The nickel within the nickel-vanadium layer may react with tin within the solder bump to form an inter-metallic compound.
申请公布号 US2004104484(A1) 申请公布日期 2004.06.03
申请号 US20030604795 申请日期 2003.08.18
申请人 CHEN WILLIAM TZE-YOU;TONG HO-MING;LEE CHUN-CHI;TAO SU;WU JENG-DA;CHANG CHIH-HUANG;CHENG PO-JEN 发明人 CHEN WILLIAM TZE-YOU;TONG HO-MING;LEE CHUN-CHI;TAO SU;WU JENG-DA;CHANG CHIH-HUANG;CHENG PO-JEN
分类号 H01L21/60;H01L23/485;(IPC1-7):H01L23/48 主分类号 H01L21/60
代理机构 代理人
主权项
地址