发明名称 |
A SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE |
摘要 |
A method is proposed for the fabrication of the gate electrode of a semiconductor device such that the effects of gate depletion are minimized. The method is comprised of a dual deposition process wherein the first step is a very thin layer that is doped very heavily by ion implantation. The second deposition, with an associated ion implant for doping, completes the gate electrode. With the two-deposition process, it is possible to maximize the doping at the gate electrode/gate dielectric interface while minimizing risk of boron penetration of the gate dielectric. A further development of this method includes the patterning of both gate electrode layers with the advantage of utilizing the drain extension and source/drain implants as the gate doping implants and the option of offsetting the two patterns to create an asymmetric device. A method is also provided for the formation of shallow junctions in a semiconductor substrate by diffusion of dopant from an implanted layer contained within a dielectric layer into the semiconductor surface. Further, the ion implanted layer is provided with a second implanted species, such as hydrogen, in addition to the intended dopant species, wherein said species enhances the diffusivity of the dopant in the dielectric layer. |
申请公布号 |
WO2004003970(A3) |
申请公布日期 |
2004.06.03 |
申请号 |
WO2003US19085 |
申请日期 |
2003.06.18 |
申请人 |
SEMEQUIP INC.;KRULL, WADE, A.;JACOBSON, DALE, C. |
发明人 |
KRULL, WADE, A.;JACOBSON, DALE, C. |
分类号 |
H01L21/8234;H01L21/225;H01L21/265;H01L21/28;H01L21/3115;H01L21/3215;H01L21/336;H01L27/088;H01L29/423;H01L29/49;H01L29/51;H01L29/78 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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