| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solar cell that uses a semiconductor constituted in a chalcopyrite structure containing a group Ib element, a group IIIb element, and a group VIb element in a light absorbing layer and has high characteristics. <P>SOLUTION: This solar battery contains a conductive layer (first electrode layer) 12, a compound semiconductor layer which functions as the light absorbing layer 13, a window layer, and a transparent conductive layer (second electrode layer) 16 in this corder. The light absorbing layer 13 is composed of a compound semiconductor which is constituted in the chalcopyrite structure containing the group Ib, IIIb, and VIb elements and to which Na is doped. The compound semiconductor contains Ga as the group IIIb element. The Na and Ga concentrations in the light absorbing layer 13 are made to become the highest in the window layer-side surface and to fall toward the conductive layer 12 side. After falling, the concentrations are made to increase toward the conductive layer 12 side until they are fixed at values which are lower than those in the window layer-side surface. <P>COPYRIGHT: (C)2004,JPO</p> |
