发明名称 HIGH FREQUENCY CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a single balance mixer having a new circuit configuration which can be integrated into a monolithic semiconductor chip. SOLUTION: The source of a first field effect transistor (FET) 101a and a source of a second FET 103a are connected, and the source of a first dual gate FET 201a having a first gate and a second gate and the source of a second dual gate FET 203a having a third gate and a fourth gate are connected. Then, the drain of the first FET 101a is connected to the first gate, and the drain of the second FET 103a is connected to the third gate. Then, a first high frequency input signal is inputted to the gate of the first or second FET, and a second high frequency input signal is inputted to the second gate and the fourth gate. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004159357(A) 申请公布日期 2004.06.03
申请号 JP20030426856 申请日期 2003.12.24
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 IN SAKAE;KUNIHISA TAKETO;ISHIKAWA OSAMU
分类号 H03D7/00;H03D7/12;H03D7/14;H03F1/32;(IPC1-7):H03F1/32 主分类号 H03D7/00
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