发明名称 |
Drain/source extension structure of a field effect transistor including doped high-k sidewall spacers |
摘要 |
High-k dielectric spacer elements on the gate electrode of a field effects transistor in combination with an extension region that is formed by dopant diffusion from the high-k spacer elements into the underlying semiconductor region provides for an increased charge carrier density in the extension region. In this way, the limitation of the charge carrier density to approximately the solid solubility of dopants in the extension region may be overcome, thereby allowing extremely shallow extension regions without unduly compromising the transistor performance.
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申请公布号 |
US2004104442(A1) |
申请公布日期 |
2004.06.03 |
申请号 |
US20030442745 |
申请日期 |
2003.05.21 |
申请人 |
FEUDEL THOMAS;HORSTMANN MANFRED;WIECZOREK KARSTEN;KRUEGEL STEPHAN |
发明人 |
FEUDEL THOMAS;HORSTMANN MANFRED;WIECZOREK KARSTEN;KRUEGEL STEPHAN |
分类号 |
H01L21/225;H01L21/336;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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