METHOD FOR FABRICATING HIGH DIELECTRIC CAPACITOR OF SEMICONDUCTOR DEVICE TO GUARANTEE PROCESS MARGIN

摘要

PURPOSE: A method for fabricating a high dielectric capacitor of a semiconductor device is provided to guarantee a process margin by maintaining thermal stability of a capacitor even if a heat treatment is performed at a high temperature in an oxygen atmosphere. CONSTITUTION: An interlayer dielectric(11) is formed on a semiconductor substrate(10) having a predetermined underlying layer. The interlayer dielectric is selectively etched to form a contact hole exposing a predetermined portion of the semiconductor substrate. A contact plug is formed to fill a part of the contact hole. A titanium layer is formed to fill the rest of the contact hole. The surface of the titanium layer is oxidized to form a titanium oxide layer(14). The titanium oxide layer is processed with an electron beam to destroy the insulating property of the titanium oxide layer. A conductive layer for a lower electrode is formed on the resultant structure. A high dielectric thin film and a conductive layer for an upper electrode are sequentially formed on the resultant structure.