| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can reduce the ground inductance of via holes while preventing decrease in strength and increase in size, and an MMIC (monolithic microwave integrated circuit). SOLUTION: This microwave-band amplifier GaAs MMIC has a ground electrode 8 equipped with a group 12 of three via holes 11. Each of the three via holes 11 has a plated metal portion 10a on its sidewall. The interaction between the plated metal portions 10a, which are close to each other, generates high-frequency electromagnetic field coupling, thereby reducing the ground inductance. COPYRIGHT: (C)2004,JPO
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