| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a trench isolation structure without generating a void by a simplified process at a low cost. SOLUTION: After a pad oxide film, a silicon nitride film, and a silicon oxide film are deposited on the surface of an SOI layer formed on an SOI substrate, a trench reaching an embedded oxide film of the SOI substrate is formed. A positive resist is then applied to cover the surface of the silicon oxide film deposited on the surface of the SOI substrate, and the bottom of the trench and only the resist applied to the silicon oxide film is removed by exposure and development. Subsequently, an exposed silicon oxide film is removed by etching and the resist remaining at the bottom of the trench is removed. A side wall oxide film is formed on the inner wall of the trench and then the trench is filled with a filling material, e.g. polysilicon. COPYRIGHT: (C)2004,JPO
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