| 摘要 |
PROBLEM TO BE SOLVED: To avoid boron contamination from a natural oxide film, and prevent the change of surface resistance in a manufacturing method of a silicon wafer and a heat treatment apparatus. SOLUTION: The manufacturing method of the silicon wafer comprises a heat treatment process of installing the silicon wafer W inside a reaction chamber 2, and heat-treating the silicon wafer in an atmospheric gas G. Before the heat treatment process, there is an oxide film removing process of performing heat treatment in a reducing gas at a temperature lower than the one to perform the heat treatment and removing the natural oxide film on a wafer surface. The oxide film removing process is performed while detecting the presence / absence of the natural oxide film, and the supply of the reducing gas into the reaction chamber is stopped at the point of time at which the natural oxide film is completely removed. COPYRIGHT: (C)2004,JPO
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