| 摘要 |
PROBLEM TO BE SOLVED: To provide a charged particle beam exposure method and a charged particle beam aligner in which degradation of pattern accuracy dependent on the error in the Z axis position of a wafer stage can be prevented. SOLUTION: The aligner is provided with a detector for detecting the Z axis position of a sensitive substrate 23, a stage 24 for correcting the Z axis (beam axis) position of the sensitive substrate 23, and a lens for correcting focus of a projection optical system. A shot cycle is set with a moderate margin. When correction error in the Z axis position of the sensitive substrate 23 exceeds an allowance in a subfield, the subfield is exposed after waiting until that error falls within the allowance. COPYRIGHT: (C)2004,JPO
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