发明名称 |
Voltage follower circuit |
摘要 |
A voltage follower comprising a first field-effect transistor (MN1) whose gate forms the input of the voltage follower. Further provided is a second field-effect transistor (MN2) whose drain connected to the gate forms the output of the voltage follower. The sources of the two field-effect transistors (MN1, MN2) are connected to each other and to the drain of a third field-effect transistor (MN3) serving as current source and to the gate of which a predefined bias voltage is applied. The invention employs in addition a fourth field-effect transistor (MN4) whose source-drain path is circuited between the output of the voltage follower and the drain of the third field-effect transistor (MN3) and whose gate is connected to the gate of the third field-effect transistor (MN3). As compared to prior art voltage followers the voltage follower in accordance with the invention comprises a wider voltage range in which it can be put to use. This can be made use of e.g. in amplitude shift-keyed (ASK) demodulators incorporating the voltage follower in accordance with the invention and which need to be operated with particularly small supply voltages.
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申请公布号 |
US2004104767(A1) |
申请公布日期 |
2004.06.03 |
申请号 |
US20030459860 |
申请日期 |
2003.06.12 |
申请人 |
PREXL FRANZ;STEINHAGEN WOLFGANG;OBERHUBER RALPH |
发明人 |
PREXL FRANZ;STEINHAGEN WOLFGANG;OBERHUBER RALPH |
分类号 |
H03F3/45;H03F3/50;(IPC1-7):H03D1/00 |
主分类号 |
H03F3/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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