| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase conversion memory device and a method of manufacturing the device. <P>SOLUTION: The phase conversion memory device includes a lower electrode formed on a semiconductor substrate, a phase conversion pattern formed on the lower electrode, and an upper electrode formed on the pattern. The upper electrode has a chip faced to the lower electrode above the lower electrode. In the method of manufacturing the memory device, the upper electrode having the chip faced to the lower electrode is formed by forming a conductive film on a phase conversion film having a dent faced to the lower electrode. Consequently, the density of the current flowing through the phase conversion film can be increased, because electric fields are concentrated toward the chip of the upper electrode. <P>COPYRIGHT: (C)2004,JPO |
