| 摘要 |
PROBLEM TO BE SOLVED: To maintain the wiring resistance of fined multilayered wiring at a low level and to improve the performance of an integrated circuit and, at the same time, the productivity of the multilayered wiring. SOLUTION: In a method of damascene processing, an electrically conductive damascene is formed by embedding copper 115 in a plug section 112 formed in an electrical insulation layer. After a low-k material is etched (a), the etched surface 122 of the plug section 112 is made to become a copper barrier by turning materials on the etched surface to carbon, nitrogen, bromide, boron, reduction, non-crystallization, or modification, performed by combining these treatment, the surface 122 by crashing ions 121 accelerated with a voltage or neutral particles produced by neutralizing the accelerated ions 121 into the etched surface 122, in the same treatment chamber where the low-k material is etched or another treatment chamber after the plug section 112 is transported to the chamber in a vacuum (b). Then the copper 115 is embedded in the plug section 112 (d). COPYRIGHT: (C)2004,JPO
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