| 摘要 |
PROBLEM TO BE SOLVED: To reduce the capacity of wiring where an internal circuit is connected to a pad in a semiconductor device. SOLUTION: The semiconductor device comprises a semiconductor substrate, a circuit region formed on the semiconductor substrate, a pad formed on the semiconductor substrate, wiring for connecting the circuit region to the pad, and an impurity diffusion region formed outside the circuit region on the semiconductor substrate. The impurity diffusion region is formed by essentially avoiding a range (opposite region) that opposes the wiring. Therefore, the carrier concentration at the opposite region becomes lower as compared with conventionally, where impurities are diffused also at the opposite region that opposes the wiring, thus reducing capacity formed between the wiring and the semiconductor substrate. COPYRIGHT: (C)2004,JPO
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