| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device with improved luminance and light extraction efficiency. <P>SOLUTION: In the semiconductor light-emitting device 1 comprising an active layer 3 (light-emitting layer), a current diffusion layer 5 laminated on the active layer 3, and a mesa structure 9 formed by etching the surface of the current diffusion layer 5, a prospective half angle r1 of a top face 9a of the mesa structure 9 is set approximately as the totally reflecting angle. <P>COPYRIGHT: (C)2004,JPO |
