SEMICONDUCTOR DEVICE, WIRING SUBSTRATE, AND METHOD FOR MANUFACTURING WIRING SUBSTRATE

摘要

The reliabilities of a wiring substrate and a semiconductor device are improved by reducing the internal stress caused by the difference of thermal expansion coefficients between a base substrate and a semiconductor chip. Consequently, the wiring substrate and the semiconductor device will not cause a problem of reliability even when further miniaturization and use of more pins are realized. A method for manufacturing such a wiring substrate is also disclosed. A wiring layer (5) is provided on one surface of a silicon base (3), thereby forming a wiring substrate (2). An electrode as the uppermost layer of the wiring layer (5) is provided with an external connection bump (7). A through hole (4) is formed in the base (3) for electrically connecting the wiring layer (5) and an electrode terminal arranged on a chip mounting surface of the base (3). The electrode terminal on the chip mounting surface is electrically and mechanically connected to an electrode terminal of a semiconductor chip (1) by an internal connection bump (6). The thermal expansion coefficient of the silicon base (3) is equivalent to that of the semiconductor chip (1) and not more than that of the wiring layer (5). Therefore, the stress caused by the difference of thermal expansion coefficients between the semiconductor chip (1) and the base substrate (3) is very small.