发明名称 |
COPPER ALLOY SPUTTERING TARGET AND SEMICONDUCTOR ELEMENT WIRING |
摘要 |
<p>A first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wt ppm or less of a Si; a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wt ppm or less of Mn; the first or the second alloy sputtering target further comprising one or more selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wt ppm or less; and a semiconductor element wiring formed by the use of the above target. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics.</p> |
申请公布号 |
WO2004046415(A1) |
申请公布日期 |
2004.06.03 |
申请号 |
WO2003JP13251 |
申请日期 |
2003.10.16 |
申请人 |
NIKKO MATERIALS CO., LTD.;OKABE, TAKEO;MIYASHITA, HIROHITO |
发明人 |
OKABE, TAKEO;MIYASHITA, HIROHITO |
分类号 |
C22C9/01;C22C9/02;C23C14/18;C23C14/34;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;(IPC1-7):C23C14/34;H01L21/320 |
主分类号 |
C22C9/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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