发明名称 MASK, ALIGNER AND EXPOSURE METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a mask, an aligner and an exposure method in which patterns can be transcribed by double exposure with strength of a pattern forming portion reinforced by a reinforcing beam. <P>SOLUTION: There are provided the pattern forming portions 12a, 12b with patterns through which electron beams pass to perform transcription onto a wafer, and the reinforcing beams 11 for partitioning the pattern forming portions 12a, 12b and reinforcing the strength of the pattern forming portions 12a, 12b. The reinforcing beams 11 are arranged corresponding to scribe lines 21 for dividing the wafer into each of chips 22. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004158681(A) 申请公布日期 2004.06.03
申请号 JP20020323790 申请日期 2002.11.07
申请人 SONY CORP 发明人 NOUDO SHINICHIRO
分类号 G03F1/20;G03F1/70;H01L21/027;(IPC1-7):H01L21/027;G03F1/08;G03F1/16 主分类号 G03F1/20
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