| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of erasing data, stored in a semiconductor memory device provided with floating electrodes and control electrodes, feasible without necessitating any high voltage application and capable of reducing a consumption current. <P>SOLUTION: The data written into a memory transistor A are erased by applying -10 V to the control electrode 20a of the memory transistor A for erasing data, applying +10 V to a p-type silicon substrate 10, and applying a voltage of 20 V, which is a voltage equal to or higher than a predetermined value, between the control electrode 20a and the silicon substrate 10 to extract the electric charge stored in the floating electrode 20a to the silicon substrate 10. To the control electrode 20b of the memory transistor B that stores data not to be erased, is applied +10 V, an equal voltage to that of the silicon substrate 10, to prevent the electric charge stored in the floating electrode 20a from being extracted to the silicon substrate 10. <P>COPYRIGHT: (C)2004,JPO</p> |
