| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing device by which a homogeneous metal thin film is formed on a substrate. SOLUTION: A coater part 2 applying a metal organic material on a wafer W, a baking part 3 performing a first heat treatment for the wafer W to dry, a heat treatment part 4 performing a second heat treatment for the wafer W, a plating part 5 plating the wafer W, and a loader/unloader part 6 on which cassettes CA housing an unprocessed wafer W and a processed wafer W, are mounted, are arranged around a transporting part 1 provided with a transporting robot 10. The transporting part 1 transports the wafer W between processing parts including the loader/unloader part 6, to perform the processes for forming a metal layer on the wafer W and the heat treatments for the wafer W. COPYRIGHT: (C)2004,JPO |
