| 摘要 |
PROBLEM TO BE SOLVED: To realize accurate working by reducing the sinking of the shoulder of a resist film in the step of etching an organic antireflection film and a film to be worked. SOLUTION: A method for manufacturing a semiconductor device includes a step of sequentially forming the organic antireflection film 14 and the resist film 15 on the film 13 to be worked formed on a semiconductor substrate 11 and a ground layer 12 on the substrate 11, and forming the film 15 having a fine pattern by exposing/developing; then a step of working the antireflection film 14 in a desired size with the film 15 used as a mask by dry etching; and a step of working the film 13 in a desired size with the film 15 and the film 14 used as masks. In the step of working the film 14, as the etching gas, an SO<SB>2</SB>is used, the film 14 is worked, and a protective deposit film 16 extended to the shoulder of the resist film is formed. Thus, the collapse of the pattern due to the sink of the shoulder of the film 15 can be prevented. COPYRIGHT: (C)2004,JPO
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