SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device which makes high-speed cache access et., possible. SOLUTION: A sense node equalizing circuit 40iis activated and thereafter a sense amplifier drive node equalizing circuit 50 is activated after the prescribed delay by a delay circuit 60. As a result, equalization of a sense node pair Sai/Sbiis accelerated by utilizing the charges remaining at the sense amplifier drive nodes Pi and Nl after the nodes Pl and Ni are disconnected from a power source. COPYRIGHT: (C)2004,JPO