| 发明名称 |
Method of making transistors |
| 摘要 |
A method for making transistors comprises depositing source electrode and drain electrode features onto a substrate through a single aperture in a stationary shadow mask, said aperture having at least two opposing edges; wherein the shapes of the features are defined by the aperture and location of source materials in relation to the substrate.
|
| 申请公布号 |
US2004106262(A1) |
申请公布日期 |
2004.06.03 |
| 申请号 |
US20030719209 |
申请日期 |
2003.11.21 |
| 申请人 |
3M INNOVATIVE PROPERTIES COMPANY |
发明人 |
THEISS STEVEN D.;HAASE MICHAEL A.;THEISS SILVA K. |
| 分类号 |
H01L21/285;C23C14/04;H01L21/316;H01L21/336;H01L29/417;H01L29/786;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
