发明名称 |
Method of manufacturing a flash memory cell |
摘要 |
The present invention relates to a method of manufacturing a flash memory cell. A tunnel oxide film is formed before a trench is formed and an exposed portion is then etched by a given thickness. Therefore, a phenomenon that the corner of the trench is thinly formed by a sidewall oxidization process is prevented and an active region of a desired critical dimension can be secured.
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申请公布号 |
US2004106256(A1) |
申请公布日期 |
2004.06.03 |
申请号 |
US20030706932 |
申请日期 |
2003.11.14 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
DONG CHA DEOK;KWAK NOH YEAL |
分类号 |
H01L21/76;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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