发明名称 |
Polishing pad for in-situ endpoint detection |
摘要 |
An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.
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申请公布号 |
US2004106357(A1) |
申请公布日期 |
2004.06.03 |
申请号 |
US20030722305 |
申请日期 |
2003.11.25 |
申请人 |
APPLIED MATERIALS, INC., A DELAWARE CORPORATION |
发明人 |
BIRANG MANOOCHER;GLENSON ALLAN |
分类号 |
B24B37/04;B24B47/12;B24B49/04;B24B49/12;B24B51/00;B24D7/12;B24D13/14;G01B11/06;(IPC1-7):B24B49/00 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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