| 摘要 |
A polysilicon thin film transistor and a method of forming the same is provided. A poly-island layer is formed over a substrate. A gate insulation layer is formed over the poly-island layer. A gate is formed over the gate insulation layer. Using the gate as a mask, an ion implantation of the poly-island layer is carried out to form a source/drain region in the poly-island layer outside the channel region. An oxide layer and a silicon nitride layer, together serving as an inter-layer dielectric layer, are sequentially formed over the substrate. Thickness of the oxide layer is thicker than or the same as (thickness of the nitride layer multiplied by 9000 Å)<1/2 >and maximum thickness of the nitride layer is smaller than 1000 Å.
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