发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING MULTILEVEL INTERCONNECTION
摘要 One via contact through which upper and lower interconnections of a multilevel interconnection are connected to each other is provided when the width or volume of the lower interconnection is not larger than a given value. A plurality of via contacts are arranged at regular intervals, each of which is not larger than a given value, in an effective diffusion region of voids included in the lower interconnection, when the width or volume of the lower interconnection exceeds a given value.
申请公布号 US2004104482(A1) 申请公布日期 2004.06.03
申请号 US20030717556 申请日期 2003.11.21
申请人 MIYAMOTO KOJI;YOSHIDA KENJI;KANEKO HISASHI 发明人 MIYAMOTO KOJI;YOSHIDA KENJI;KANEKO HISASHI
分类号 H01L21/768;H01L21/3205;H01L21/82;H01L21/822;H01L23/52;H01L23/522;H01L23/532;H01L27/04;(IPC1-7):H01L33/00 主分类号 H01L21/768
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