发明名称 |
Ion-beam deposition process for manufacturing binary photomask blanks |
摘要 |
An ion-beam film deposition process is described for fabricating binary photomask blanks for selected lithographic wavelengths <400 nm, the said film essentially consisting of the MOxCyNz compound where M is selected from chromium, molybdenum, tungsten, or tantalum or combination thereof in asingle layer or a multiple layer configuration.
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申请公布号 |
US2004106049(A1) |
申请公布日期 |
2004.06.03 |
申请号 |
US20030474220 |
申请日期 |
2003.10.02 |
申请人 |
CARCIA PETER FRANCIS;DIEU LAURENT |
发明人 |
CARCIA PETER FRANCIS;DIEU LAURENT |
分类号 |
C23C14/00;C23C14/06;C23C14/46;G03F1/08;(IPC1-7):G03F9/00;C23C14/32 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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