| 摘要 |
<p>A high frequency semiconductor integrated circuit device using a silicon process where the resistance of a substrate layer (1) is relatively low. The semiconductor circuit device comprises an external or internal linear, arcuate or spiral inductor (6) provided, in the substrate layer beneath the end part of the inductor, with a high concentration region (4) fixed at a constant potential at high frequency, wherein the inductor and the high concentration region constitute a high Q inductor. A semiconductor integrated circuit device comprising a high Q inductor is thereby realized.</p> |
