NITRIDE SEMICONDUCTOR, NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THEM

摘要

PROBLEM TO BE SOLVED: To provide a new lateral growing method of a nitride semiconductor which hardly causes deterioration of the crystal quality due to contamination or damages. SOLUTION: A substrate 10 different from the nitride semiconductor in composition is prepared, and a dissimilar material film 12 different from the board 10 and the nitride semiconductor in composition is formed on the surface of the substrate 10 in such a manner where the surface of the substrate 10 is cyclically exposed (first process). Then, the dissimilar material film 12 is removed off through a chemical method (second process). The nitride semiconductor 14 is made to start growing from the exposed region (region B) of the substrate which is provided in the first process and serves as a starting point (third process). The nitride semiconductor 14 is extended in a lateral direction in the region (region A) of the substrate where the dissimilar material film has been removed in the second process (fourth process). COPYRIGHT: (C)2004,JPO