发明名称 Method of forming fine patterns
摘要 It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns thereon made of a photoresist composition which is sensitive to high energy light rays with wavelength of 200 nm or shorter or electron beam radiation, with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely. The present invention provides a method of forming fine patterns whereby fine patterns having pattern width or diameter of 100 nm or shorter and being excellent in uniformity (in-plane uniformity), etc. can be formed by ultrafine processing using high energy light rays with wavelength of 200 nm or shorter or electron beams.
申请公布号 US2004104196(A1) 申请公布日期 2004.06.03
申请号 US20030644738 申请日期 2003.08.21
申请人 NAKAMURA TSUYOSHI;MATSUMIYA TASUKU;ISHIKAWA KIYOSHI;SUGETA YOSHIKI;TACHIKAWA TOSHIKAZU 发明人 NAKAMURA TSUYOSHI;MATSUMIYA TASUKU;ISHIKAWA KIYOSHI;SUGETA YOSHIKI;TACHIKAWA TOSHIKAZU
分类号 C23F1/02;G03F7/40;H01L21/027;(IPC1-7):C23F1/00;B44C1/22;C03C15/00;C03C25/68;H01B13/00 主分类号 C23F1/02
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