发明名称 |
Method of forming fine patterns |
摘要 |
It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns thereon made of a photoresist composition which is sensitive to high energy light rays with wavelength of 200 nm or shorter or electron beam radiation, with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely. The present invention provides a method of forming fine patterns whereby fine patterns having pattern width or diameter of 100 nm or shorter and being excellent in uniformity (in-plane uniformity), etc. can be formed by ultrafine processing using high energy light rays with wavelength of 200 nm or shorter or electron beams.
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申请公布号 |
US2004104196(A1) |
申请公布日期 |
2004.06.03 |
申请号 |
US20030644738 |
申请日期 |
2003.08.21 |
申请人 |
NAKAMURA TSUYOSHI;MATSUMIYA TASUKU;ISHIKAWA KIYOSHI;SUGETA YOSHIKI;TACHIKAWA TOSHIKAZU |
发明人 |
NAKAMURA TSUYOSHI;MATSUMIYA TASUKU;ISHIKAWA KIYOSHI;SUGETA YOSHIKI;TACHIKAWA TOSHIKAZU |
分类号 |
C23F1/02;G03F7/40;H01L21/027;(IPC1-7):C23F1/00;B44C1/22;C03C15/00;C03C25/68;H01B13/00 |
主分类号 |
C23F1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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