发明名称 Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device
摘要 A light-emitting device which uses a reflective metal layer, and thereby has a large light extraction efficiency and a small wavelength dependence is disclosed. The device uses one main surface of a light-emitting layer portion as a light extraction surface, and has a device substrate bonded on other main surface of the light-emitting layer portion. The device also has an Ag-base metal layer disposed between the device substrate and the light-emitting layer portion, wherein the Ag-base reflective metal layer has Ag as a major component over the entire portion thereof, and is intended for reflecting the light from the light-emitting layer portion back towards the light extraction surface side.
申请公布号 US2004104395(A1) 申请公布日期 2004.06.03
申请号 US20030718789 申请日期 2003.11.24
申请人 SHIN-ETSU HANDOTAI CO., LTD. 发明人 HAGIMOTO KAZUNORI;NOTO NOBUHIKO
分类号 H01L33/00;H01L33/40;(IPC1-7):H01L27/15;H01L31/12 主分类号 H01L33/00
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