发明名称 |
Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device |
摘要 |
A light-emitting device which uses a reflective metal layer, and thereby has a large light extraction efficiency and a small wavelength dependence is disclosed. The device uses one main surface of a light-emitting layer portion as a light extraction surface, and has a device substrate bonded on other main surface of the light-emitting layer portion. The device also has an Ag-base metal layer disposed between the device substrate and the light-emitting layer portion, wherein the Ag-base reflective metal layer has Ag as a major component over the entire portion thereof, and is intended for reflecting the light from the light-emitting layer portion back towards the light extraction surface side.
|
申请公布号 |
US2004104395(A1) |
申请公布日期 |
2004.06.03 |
申请号 |
US20030718789 |
申请日期 |
2003.11.24 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
HAGIMOTO KAZUNORI;NOTO NOBUHIKO |
分类号 |
H01L33/00;H01L33/40;(IPC1-7):H01L27/15;H01L31/12 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|