| 摘要 |
In a method for forming a silicon-on-insulator FET providing a contact to be given a fixed potential to a substrate, the substrate-biasing between the SOI transistor and the silicon substrate is performed via the plug. As a result, the contact hole for the substrate-biasing does not need to pass through the insulating layer, the silicon layer, and the interlayer insulating layer. Therefore, the interlayer insulating layer can be make shallow the depth. The invention can be enough to be implanted ions to the surface of the substrate via the contact hole for substrate-biasing. It can form the contact hole for substrate-biasing without the contact hole for substrate-biasing causes an opening fault.
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